Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades
Ano de defesa: | 2016 |
---|---|
Autor(a) principal: | |
Orientador(a): | |
Banca de defesa: | |
Tipo de documento: | Tese |
Tipo de acesso: | Acesso aberto |
Idioma: | por |
Instituição de defesa: |
Universidade Federal de São Carlos
Câmpus São Carlos |
Programa de Pós-Graduação: |
Programa de Pós-Graduação em Física - PPGF
|
Departamento: |
Não Informado pela instituição
|
País: |
Não Informado pela instituição
|
Palavras-chave em Português: | |
Área do conhecimento CNPq: | |
Link de acesso: | https://repositorio.ufscar.br/handle/ufscar/8159 |
Resumo: | This work presents the development of an experimental apparatus and a route for the growth of InP nanowires whose general characteristics and properties made them suitable for the construction of electronic devices. Among theses characteristics, one may cite: desired dimensions, uniformity, quantity and composition. The synthesis system allowed the growth of a large amount of InP nanowires with diameter distributed around values smaller than 80 nm, grown in different substrates, covering them with a dense and uniform layer. Most important, all this in a reproducible way. The structural and morphological analyses, which resulted in the above described characteristics also allowed the observation of a amorphous/polycrystalline layer around the mono crystalline nucleus of the nanowires. Afterwards, the optoelectronic properties of the samples were studied. For this purpose, three types of devices were fabricated: single nanowire based devica, built using photolitography; nanowires network based device built from direct evaporation of contacts over the nanowires layer and from the growth of nanowires over pre defined contacts. The electronic transport mechanism was investigated by temperature dependent resistance measurements, obtaining the same dominant mechanism of hopping in all three types of device. This result indicates that the effect of the disorder attributed to the amorphous/polycrystalline layer and its interface to the monocrystalline nucleus was a critical factor to the determination of the sample’s properties. In order to complement and confirm the obtained results, other experiments were carried out: thermally stimulated current, showing additional energy levels inside the band gap, indicated in literature as levels originated from structural disorder; photo luminescence measurements, presenting a strong potential fluctuation due to localized states and photoconductivity, obtaining a sub linear dependence with the power excitation, typically observed in material with the presence of carrier traps. In this manner, the influence of localized states due to structural disorder was confirmed as the maind factor to the samples behaviour for both electronic and optical properties. |
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Kamimura, HanayChiquito, Adenilson Joséhttp://lattes.cnpq.br/7087360072774314http://lattes.cnpq.br/24143572091698412016-10-21T13:53:37Z2016-10-21T13:53:37Z2016-04-13KAMIMURA, Hanay. Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades. 2016. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2016. Disponível em: https://repositorio.ufscar.br/handle/ufscar/8159.https://repositorio.ufscar.br/handle/ufscar/8159This work presents the development of an experimental apparatus and a route for the growth of InP nanowires whose general characteristics and properties made them suitable for the construction of electronic devices. Among theses characteristics, one may cite: desired dimensions, uniformity, quantity and composition. The synthesis system allowed the growth of a large amount of InP nanowires with diameter distributed around values smaller than 80 nm, grown in different substrates, covering them with a dense and uniform layer. Most important, all this in a reproducible way. The structural and morphological analyses, which resulted in the above described characteristics also allowed the observation of a amorphous/polycrystalline layer around the mono crystalline nucleus of the nanowires. Afterwards, the optoelectronic properties of the samples were studied. For this purpose, three types of devices were fabricated: single nanowire based devica, built using photolitography; nanowires network based device built from direct evaporation of contacts over the nanowires layer and from the growth of nanowires over pre defined contacts. The electronic transport mechanism was investigated by temperature dependent resistance measurements, obtaining the same dominant mechanism of hopping in all three types of device. This result indicates that the effect of the disorder attributed to the amorphous/polycrystalline layer and its interface to the monocrystalline nucleus was a critical factor to the determination of the sample’s properties. In order to complement and confirm the obtained results, other experiments were carried out: thermally stimulated current, showing additional energy levels inside the band gap, indicated in literature as levels originated from structural disorder; photo luminescence measurements, presenting a strong potential fluctuation due to localized states and photoconductivity, obtaining a sub linear dependence with the power excitation, typically observed in material with the presence of carrier traps. In this manner, the influence of localized states due to structural disorder was confirmed as the maind factor to the samples behaviour for both electronic and optical properties.Este trabalho apresenta o desenvolvimento do aparato experimental e de uma rota para crescimento de nanofios de InP que exibiram, de maneira geral, características e propriedades que os tornaram adequados para a construção de dispositivos eletrônicos, dentre as quais pode-se citar: dimensões, uniformidade, quantidade e composição desejadas. O sistema de síntese permitiu o crescimento de uma grande quantidade de nanofios de InP com diâmetros distribuídos em torno de 80 nm, em diferentes tipos de substratos, recobrindo-os com uma camada densa e uniforme, e, o mais importante, de maneira reprodutível. Após as caracterizações estruturais e morfológicas que resultaram nas características descritas acima e na observação da formação de uma camada amorfa/policristalina em torno do núcleo monocristalino dos nanofios, as propriedades optoeletrônicas das amostras foram estudadas. Para isso foram fabricados três tipos de dispositivos: de um único fio, por litografia óptica; dispositivos de muitos fios por evaporação direta de contatos metálicos sobre a camada de nanofios e pelo crescimento de nanofios sobre os contatos, pré definidos. O mecanismo de transporte eletrônico foi investigado por meio de medidas de resistência em função da temperatura e, nos três tipos de dispositivos, foi obtido o mecanismo de hopping como dominante no processo de condução, indicando que o efeito da desordem devido à camada amorfa/policristalina, e a sua interface com o núcleo monocristalino, foi crítico para definir as propriedades das amostras. Para complementar e confirmar estes resultados, foram realizadas outros experimentos: corrente termicamente estimulada, mostrando níveis adicionais dentro do gap, indicados na literatura como níveis originados por desordem estrutural; fotoluminescência, apresentando uma forte flutuação de potencial devido a estados localizados e fotocondutividade, obtendo uma dependência sublinear com a potência de excitação, típica de materiais com presença de armadilha de portadores. Dessa forma, a influência dos estados localizados devido à desordem estrutural foi confirmada como principal fator para o comportamento das amostras tanto em relação às propriedades eletrônicas quanto ópticas.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)2012/06916-4porUniversidade Federal de São CarlosCâmpus São CarlosPrograma de Pós-Graduação em Física - PPGFUFSCarNanofiosDispositivos eletrônicosTransporte eletrônicoPropriedades eletrônicasPropriedades ópticasCIENCIAS EXATAS E DA TERRAUm estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedadesinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/doctoralThesisOnlineinfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFSCARinstname:Universidade Federal de São Carlos (UFSCAR)instacron:UFSCARORIGINALTeseHK.pdfTeseHK.pdfapplication/pdf24150463https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/8159/1/TeseHK.pdf01dbd687f820bc66bb3bdd11007d35a8MD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81957https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/8159/2/license.txtae0398b6f8b235e40ad82cba6c50031dMD52TEXTTeseHK.pdf.txtTeseHK.pdf.txtExtracted texttext/plain166372https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/8159/3/TeseHK.pdf.txt2aa4e99ebc4909b05d34cc68389e5635MD53THUMBNAILTeseHK.pdf.jpgTeseHK.pdf.jpgIM Thumbnailimage/jpeg5495https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/8159/4/TeseHK.pdf.jpg91054838e16b0c9a49b7adcb407022f3MD54ufscar/81592019-09-11 02:35:20.682oai:repositorio.ufscar.br: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Repositório InstitucionalPUBhttps://repositorio.ufscar.br/oai/requestopendoar:43222023-05-25T12:53:29.098165Repositório Institucional da UFSCAR - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.por.fl_str_mv |
Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades |
title |
Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades |
spellingShingle |
Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades Kamimura, Hanay Nanofios Dispositivos eletrônicos Transporte eletrônico Propriedades eletrônicas Propriedades ópticas CIENCIAS EXATAS E DA TERRA |
title_short |
Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades |
title_full |
Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades |
title_fullStr |
Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades |
title_full_unstemmed |
Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades |
title_sort |
Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades |
author |
Kamimura, Hanay |
author_facet |
Kamimura, Hanay |
author_role |
author |
dc.contributor.authorlattes.por.fl_str_mv |
http://lattes.cnpq.br/2414357209169841 |
dc.contributor.author.fl_str_mv |
Kamimura, Hanay |
dc.contributor.advisor1.fl_str_mv |
Chiquito, Adenilson José |
dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/7087360072774314 |
contributor_str_mv |
Chiquito, Adenilson José |
dc.subject.por.fl_str_mv |
Nanofios Dispositivos eletrônicos Transporte eletrônico Propriedades eletrônicas Propriedades ópticas |
topic |
Nanofios Dispositivos eletrônicos Transporte eletrônico Propriedades eletrônicas Propriedades ópticas CIENCIAS EXATAS E DA TERRA |
dc.subject.cnpq.fl_str_mv |
CIENCIAS EXATAS E DA TERRA |
description |
This work presents the development of an experimental apparatus and a route for the growth of InP nanowires whose general characteristics and properties made them suitable for the construction of electronic devices. Among theses characteristics, one may cite: desired dimensions, uniformity, quantity and composition. The synthesis system allowed the growth of a large amount of InP nanowires with diameter distributed around values smaller than 80 nm, grown in different substrates, covering them with a dense and uniform layer. Most important, all this in a reproducible way. The structural and morphological analyses, which resulted in the above described characteristics also allowed the observation of a amorphous/polycrystalline layer around the mono crystalline nucleus of the nanowires. Afterwards, the optoelectronic properties of the samples were studied. For this purpose, three types of devices were fabricated: single nanowire based devica, built using photolitography; nanowires network based device built from direct evaporation of contacts over the nanowires layer and from the growth of nanowires over pre defined contacts. The electronic transport mechanism was investigated by temperature dependent resistance measurements, obtaining the same dominant mechanism of hopping in all three types of device. This result indicates that the effect of the disorder attributed to the amorphous/polycrystalline layer and its interface to the monocrystalline nucleus was a critical factor to the determination of the sample’s properties. In order to complement and confirm the obtained results, other experiments were carried out: thermally stimulated current, showing additional energy levels inside the band gap, indicated in literature as levels originated from structural disorder; photo luminescence measurements, presenting a strong potential fluctuation due to localized states and photoconductivity, obtaining a sub linear dependence with the power excitation, typically observed in material with the presence of carrier traps. In this manner, the influence of localized states due to structural disorder was confirmed as the maind factor to the samples behaviour for both electronic and optical properties. |
publishDate |
2016 |
dc.date.accessioned.fl_str_mv |
2016-10-21T13:53:37Z |
dc.date.available.fl_str_mv |
2016-10-21T13:53:37Z |
dc.date.issued.fl_str_mv |
2016-04-13 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/doctoralThesis |
format |
doctoralThesis |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
KAMIMURA, Hanay. Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades. 2016. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2016. Disponível em: https://repositorio.ufscar.br/handle/ufscar/8159. |
dc.identifier.uri.fl_str_mv |
https://repositorio.ufscar.br/handle/ufscar/8159 |
identifier_str_mv |
KAMIMURA, Hanay. Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas propriedades. 2016. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2016. Disponível em: https://repositorio.ufscar.br/handle/ufscar/8159. |
url |
https://repositorio.ufscar.br/handle/ufscar/8159 |
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por |
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por |
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info:eu-repo/semantics/openAccess |
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openAccess |
dc.publisher.none.fl_str_mv |
Universidade Federal de São Carlos Câmpus São Carlos |
dc.publisher.program.fl_str_mv |
Programa de Pós-Graduação em Física - PPGF |
dc.publisher.initials.fl_str_mv |
UFSCar |
publisher.none.fl_str_mv |
Universidade Federal de São Carlos Câmpus São Carlos |
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Repositório Institucional da UFSCAR |
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