Desenvolvimento e caracterização de dispositivos para reposição de filmes finos por descarga em cátodo oco

• Ano de defesa: 2006
• Autor(a) principal: Araújo, Francisco Odolberto de
• Orientador(a): Alves Júnior, Clodomiro
• Tipo de documento: Tese
• Tipo de acesso: Acesso aberto
• Idioma: por
• Instituição de defesa: Universidade Federal do Rio Grande do Norte
• Programa de Pós-Graduação: Programa de Pós-Graduação em Física
• Departamento: Física da Matéria Condensada; Astrofísica e Cosmologia; Física da Ionosfera
• País: BR
• Palavras-chave em Português: Filmes finos; Substrato de silício; Cátodo oco; Processo sol-gel; Gaiola ionizante
• Palavras-chave em Inglês: Films; Silicon substrates; Hollow cathode; Sol-gel process; Ionizing cage
• Área do conhecimento CNPq: CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA
• Link de acesso: https://repositorio.ufrn.br/jspui/handle/123456789/16640

In the present work we use a plasma jet system with a hollow cathode to deposit thin TiO2 films on silicon substrates as alternative at sol-gel, PECVD, dip-coating e magnetron sputtering techniques. The cylindrical cathode, made from pure titanium, can be negatively polarized between 0 e 1200 V and supports an electrical current of up to 1 A. An Ar/O2 mixture, with a total flux of 20 sccm and an O2 percentage ranging between 0 and 30%, is passed through a cylindrical hole machined in the cathode. The plasma parameters and your influence on the properties of deposited TiO2 films and their deposition rate was studied. When discharge occurs, titanium atoms are sputtered/evaporated. They are transported by the jet and deposited on the Si substrates located on the substrate holder facing the plasma jet system at a distance ranging between10 and 50 mm from the cathode. The working pressure was 10-3 mbar and the deposition time was 10 -60 min. Deposited films were characterized by scanning electron microscopy and atomic force microscopy to check the film uniformity and morphology and by X-ray diffraction to analyze qualitatively the phases present. Also it is presented the new dispositive denominate ionizing cage, derived from the active screen plasma nitriding (ASPN), but based in hollow cathode effect, recently developed. In this process, the sample was involved in a cage, in which the cathodic potential was applied. The samples were placed on an insulator substrate holder, remaining in a floating potential, and then it was treated in reactive plasma in hollow cathode regime. Moreover, the edge effect was completely eliminated, since the plasma was formed on the cage and not directly onto the samples and uniformity layer was getting in all sampl