O desafio tecnológico da produção de VO2 por sputtering reativo: vantagens e limitações da técnica
Ano de defesa: | 2022 |
---|---|
Autor(a) principal: | |
Orientador(a): | |
Banca de defesa: | , , , |
Tipo de documento: | Tese |
Tipo de acesso: | Acesso aberto |
Idioma: | por |
Instituição de defesa: |
Universidade Federal de Santa Maria
Centro de Ciências Naturais e Exatas |
Programa de Pós-Graduação: |
Programa de Pós-Graduação em Física
|
Departamento: |
Física
|
País: |
Brasil
|
Palavras-chave em Português: | |
Palavras-chave em Inglês: | |
Área do conhecimento CNPq: | |
Link de acesso: | http://repositorio.ufsm.br/handle/1/26453 |
Resumo: | The vanadium dioxide(VO2) presents a semiconductor-to-metal (SMT) transition near room temperature, as well as a structural phase transition (monoclinic-tetragonal or triclinictetragonal). The first report on SMT is from 60 years ago, but the underneath physics is still not completely clear. From the fundamental point of view, the current trend is to include the VO2 in the class of complex materials, where the interplay among several mechanisms determines the physical properties. Like other systems of this class, the behavior near transition is strongly related to the material stoichiometry and morphology, wich impacts its applications. On the other hand, the production of VO2 samples using sputtering in a large scale is attractive because of the work temperature of this system. In this work we explore the production of VO2 thin films on silicon substrates by reactive sputtering technique in order to establish its versatility and its reproduction limits. More than twenty samples were produced and used to evaluate the effects of metal target poisoning (by using XPS measuments and monitoring of the target impedance), as well as the atmosphere composition inside the chamber (by using a RGA) on the samples quality. The crystallographic and topographic characteristics of some samples produced under distinct parameters were also investigated. In order to analyze the sample surfaces the atomic force mycroscope was used. The crystallographic phases and its transitions were analyzed by X ray diffraction and from this measurements XR simulations and Williamsom-Hall (W-H) plot were performed to understand the role played by the strain in the film growth. They show that the system assumes crystallographic structures that describe a trajectory in the bulk VO2 phase diagram. Initial results on the electrical response with the current perpendicular to the substrate are shown. Such results were obtained with the CP-AFM technique in samples produced over metallic electrodes. Magnetic susceptibility measurements as a function of temperature and magnetization curves were performed and are presented, indicating promising paths to be explored. |
id |
UFSM_7b7bdb612708a2e0f2a96c4bfc637ca4 |
---|---|
oai_identifier_str |
oai:repositorio.ufsm.br:1/26453 |
network_acronym_str |
UFSM |
network_name_str |
Biblioteca Digital de Teses e Dissertações do UFSM |
repository_id_str |
|
spelling |
2022-10-11T15:27:24Z2022-10-11T15:27:24Z2022-09-22http://repositorio.ufsm.br/handle/1/26453The vanadium dioxide(VO2) presents a semiconductor-to-metal (SMT) transition near room temperature, as well as a structural phase transition (monoclinic-tetragonal or triclinictetragonal). The first report on SMT is from 60 years ago, but the underneath physics is still not completely clear. From the fundamental point of view, the current trend is to include the VO2 in the class of complex materials, where the interplay among several mechanisms determines the physical properties. Like other systems of this class, the behavior near transition is strongly related to the material stoichiometry and morphology, wich impacts its applications. On the other hand, the production of VO2 samples using sputtering in a large scale is attractive because of the work temperature of this system. In this work we explore the production of VO2 thin films on silicon substrates by reactive sputtering technique in order to establish its versatility and its reproduction limits. More than twenty samples were produced and used to evaluate the effects of metal target poisoning (by using XPS measuments and monitoring of the target impedance), as well as the atmosphere composition inside the chamber (by using a RGA) on the samples quality. The crystallographic and topographic characteristics of some samples produced under distinct parameters were also investigated. In order to analyze the sample surfaces the atomic force mycroscope was used. The crystallographic phases and its transitions were analyzed by X ray diffraction and from this measurements XR simulations and Williamsom-Hall (W-H) plot were performed to understand the role played by the strain in the film growth. They show that the system assumes crystallographic structures that describe a trajectory in the bulk VO2 phase diagram. Initial results on the electrical response with the current perpendicular to the substrate are shown. Such results were obtained with the CP-AFM technique in samples produced over metallic electrodes. Magnetic susceptibility measurements as a function of temperature and magnetization curves were performed and are presented, indicating promising paths to be explored.O dióxido de vanádio(VO2) apresenta uma transição semicondutor-metal (SMT) próxima a temperatura ambiente, juntamente com uma transição de fase estrutural (monoclínicatetragonal ou triclínica-tetragonal). A primeira observação desse efeito já tem 60 anos, mas a física por trás do fenômeno ainda não está completamente clara. Do ponto de vista fundamental, atualmente o VO2 está incluso na classe de materiais complexos, onde a interação entre vários mecanismos determina as propriedades físicas. Como outros sistemas dessa classe, o comportamento próximo a transição é fortemente sensível a estequiometria e morfologia do material, com impacto em suas aplicações. Por sua vez, a produção de amostras de VO2 por sputtering em larga escala é atrativa do ponto de vista tecnológico por causa das temperaturas em que este opera. Neste trabalho exploramos a produção sobre substratos de silício de filmes finos de VO2 pela técnica de sputtering reativo visando estabelecer a sua versatilidade e os seus limites de reprodução. Mais de vinte amostras foram produzidas, e usadas para avaliar efeitos do envenenamento do alvo metálico (a partir de medidas de espectroscopia de fotoelétrons excitados por raios X (XPS) e monitoramento da impedância do alvo), bem como da composição da atmosfera na câmara (utilizando um analisador de gás residual (RGA)) sobre a qualidade das amostras. Foram também estudadas as características cristalográficas e morfológicas de algumas amostras produzidas sob diferentes parâmetros. Para visualizar a topografia das amostras foi usado o microscópio de força atômica (AFM). As fases cristalográficas e suas transições foram caracterizadas por difração de raios X e, a partir destas medidas, foram realizadas simulações de RX e curvas de Williamsom-Hall (W-H) com o intuito de entender o papel das deformações no crescimento dos filmes. Elas mostram que o sistema assume estruturas cristalográficas que descrevem uma trajetória no diagrama de fases do VO2 massivo. Resultados iniciais sobre a resposta elétrica com corrente perpendicular ao substrato são mostrados. Tais resultados foram obtidos com a técnica de microscopia de força atômica de sonda condutora (CP-AFM) em amostras produzidas sobre eletrodos metálicos. Medidas de suscetibilidade magnética em função da temperatura e curvas de magnetização foram realizadas e são apresentadas, indicando caminhos promissores a serem explorados.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPESporUniversidade Federal de Santa MariaCentro de Ciências Naturais e ExatasPrograma de Pós-Graduação em FísicaUFSMBrasilFísicaAttribution-NonCommercial-NoDerivatives 4.0 Internationalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessDióxido de vanádioTransição semicondutor-metalSputteringVanadium dioxideSemiconductor to metal transitionCNPQ::CIENCIAS EXATAS E DA TERRA::FISICAO desafio tecnológico da produção de VO2 por sputtering reativo: vantagens e limitações da técnicaThe technological challenge of VO2 production by reactive sputtering: advantages and limitations of the techniqueinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/doctoralThesisDorneles, Lucio Strazzaboscohttp://lattes.cnpq.br/7244173039310066Gomes, Matheus GaminoFlores, Wladimir HernandezDaudt, Natália de FreitasOliveira, Artur Harres dehttp://lattes.cnpq.br/9304625088554861Schneider, Angélica Daiane100500000006600600600600600600600e5de4f50-b352-48fb-a699-ffab7b7d8f1d9a529988-d864-409e-b05e-aa7afe86f3b5ba4ed109-f8a1-416d-838a-27987cc53aaf8a1aea72-fe0c-4a61-9ab3-16e75c2fe9d0cc3fa52f-cd1b-4fe4-a2f7-4ee37a3541709f0ef3a9-c526-41e9-84e6-e239bf2ad355reponame:Biblioteca Digital de Teses e Dissertações do UFSMinstname:Universidade Federal de Santa Maria (UFSM)instacron:UFSMCC-LICENSElicense_rdflicense_rdfapplication/rdf+xml; charset=utf-8805http://repositorio.ufsm.br/bitstream/1/26453/2/license_rdf4460e5956bc1d1639be9ae6146a50347MD52ORIGINALTES_PPGFISICA_2022_SCHNEIDER_ANGELICA.pdfTES_PPGFISICA_2022_SCHNEIDER_ANGELICA.pdfTeseapplication/pdf53419518http://repositorio.ufsm.br/bitstream/1/26453/1/TES_PPGFISICA_2022_SCHNEIDER_ANGELICA.pdf652c39330f67768289683f4a7f9844efMD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81956http://repositorio.ufsm.br/bitstream/1/26453/3/license.txt2f0571ecee68693bd5cd3f17c1e075dfMD531/264532022-10-11 12:27:24.691oai:repositorio.ufsm.br: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 Digital de Teses e Dissertaçõeshttps://repositorio.ufsm.br/ONGhttps://repositorio.ufsm.br/oai/requestatendimento.sib@ufsm.br||tedebc@gmail.comopendoar:2022-10-11T15:27:24Biblioteca Digital de Teses e Dissertações do UFSM - Universidade Federal de Santa Maria (UFSM)false |
dc.title.por.fl_str_mv |
O desafio tecnológico da produção de VO2 por sputtering reativo: vantagens e limitações da técnica |
dc.title.alternative.eng.fl_str_mv |
The technological challenge of VO2 production by reactive sputtering: advantages and limitations of the technique |
title |
O desafio tecnológico da produção de VO2 por sputtering reativo: vantagens e limitações da técnica |
spellingShingle |
O desafio tecnológico da produção de VO2 por sputtering reativo: vantagens e limitações da técnica Schneider, Angélica Daiane Dióxido de vanádio Transição semicondutor-metal Sputtering Vanadium dioxide Semiconductor to metal transition CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA |
title_short |
O desafio tecnológico da produção de VO2 por sputtering reativo: vantagens e limitações da técnica |
title_full |
O desafio tecnológico da produção de VO2 por sputtering reativo: vantagens e limitações da técnica |
title_fullStr |
O desafio tecnológico da produção de VO2 por sputtering reativo: vantagens e limitações da técnica |
title_full_unstemmed |
O desafio tecnológico da produção de VO2 por sputtering reativo: vantagens e limitações da técnica |
title_sort |
O desafio tecnológico da produção de VO2 por sputtering reativo: vantagens e limitações da técnica |
author |
Schneider, Angélica Daiane |
author_facet |
Schneider, Angélica Daiane |
author_role |
author |
dc.contributor.advisor1.fl_str_mv |
Dorneles, Lucio Strazzabosco |
dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/7244173039310066 |
dc.contributor.referee1.fl_str_mv |
Gomes, Matheus Gamino |
dc.contributor.referee2.fl_str_mv |
Flores, Wladimir Hernandez |
dc.contributor.referee3.fl_str_mv |
Daudt, Natália de Freitas |
dc.contributor.referee5.fl_str_mv |
Oliveira, Artur Harres de |
dc.contributor.authorLattes.fl_str_mv |
http://lattes.cnpq.br/9304625088554861 |
dc.contributor.author.fl_str_mv |
Schneider, Angélica Daiane |
contributor_str_mv |
Dorneles, Lucio Strazzabosco Gomes, Matheus Gamino Flores, Wladimir Hernandez Daudt, Natália de Freitas Oliveira, Artur Harres de |
dc.subject.por.fl_str_mv |
Dióxido de vanádio Transição semicondutor-metal |
topic |
Dióxido de vanádio Transição semicondutor-metal Sputtering Vanadium dioxide Semiconductor to metal transition CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA |
dc.subject.eng.fl_str_mv |
Sputtering Vanadium dioxide Semiconductor to metal transition |
dc.subject.cnpq.fl_str_mv |
CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA |
description |
The vanadium dioxide(VO2) presents a semiconductor-to-metal (SMT) transition near room temperature, as well as a structural phase transition (monoclinic-tetragonal or triclinictetragonal). The first report on SMT is from 60 years ago, but the underneath physics is still not completely clear. From the fundamental point of view, the current trend is to include the VO2 in the class of complex materials, where the interplay among several mechanisms determines the physical properties. Like other systems of this class, the behavior near transition is strongly related to the material stoichiometry and morphology, wich impacts its applications. On the other hand, the production of VO2 samples using sputtering in a large scale is attractive because of the work temperature of this system. In this work we explore the production of VO2 thin films on silicon substrates by reactive sputtering technique in order to establish its versatility and its reproduction limits. More than twenty samples were produced and used to evaluate the effects of metal target poisoning (by using XPS measuments and monitoring of the target impedance), as well as the atmosphere composition inside the chamber (by using a RGA) on the samples quality. The crystallographic and topographic characteristics of some samples produced under distinct parameters were also investigated. In order to analyze the sample surfaces the atomic force mycroscope was used. The crystallographic phases and its transitions were analyzed by X ray diffraction and from this measurements XR simulations and Williamsom-Hall (W-H) plot were performed to understand the role played by the strain in the film growth. They show that the system assumes crystallographic structures that describe a trajectory in the bulk VO2 phase diagram. Initial results on the electrical response with the current perpendicular to the substrate are shown. Such results were obtained with the CP-AFM technique in samples produced over metallic electrodes. Magnetic susceptibility measurements as a function of temperature and magnetization curves were performed and are presented, indicating promising paths to be explored. |
publishDate |
2022 |
dc.date.accessioned.fl_str_mv |
2022-10-11T15:27:24Z |
dc.date.available.fl_str_mv |
2022-10-11T15:27:24Z |
dc.date.issued.fl_str_mv |
2022-09-22 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/doctoralThesis |
format |
doctoralThesis |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://repositorio.ufsm.br/handle/1/26453 |
url |
http://repositorio.ufsm.br/handle/1/26453 |
dc.language.iso.fl_str_mv |
por |
language |
por |
dc.relation.cnpq.fl_str_mv |
100500000006 |
dc.relation.confidence.fl_str_mv |
600 600 600 600 600 600 600 |
dc.relation.authority.fl_str_mv |
e5de4f50-b352-48fb-a699-ffab7b7d8f1d 9a529988-d864-409e-b05e-aa7afe86f3b5 ba4ed109-f8a1-416d-838a-27987cc53aaf 8a1aea72-fe0c-4a61-9ab3-16e75c2fe9d0 cc3fa52f-cd1b-4fe4-a2f7-4ee37a354170 9f0ef3a9-c526-41e9-84e6-e239bf2ad355 |
dc.rights.driver.fl_str_mv |
Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/ info:eu-repo/semantics/openAccess |
rights_invalid_str_mv |
Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/ |
eu_rights_str_mv |
openAccess |
dc.publisher.none.fl_str_mv |
Universidade Federal de Santa Maria Centro de Ciências Naturais e Exatas |
dc.publisher.program.fl_str_mv |
Programa de Pós-Graduação em Física |
dc.publisher.initials.fl_str_mv |
UFSM |
dc.publisher.country.fl_str_mv |
Brasil |
dc.publisher.department.fl_str_mv |
Física |
publisher.none.fl_str_mv |
Universidade Federal de Santa Maria Centro de Ciências Naturais e Exatas |
dc.source.none.fl_str_mv |
reponame:Biblioteca Digital de Teses e Dissertações do UFSM instname:Universidade Federal de Santa Maria (UFSM) instacron:UFSM |
instname_str |
Universidade Federal de Santa Maria (UFSM) |
instacron_str |
UFSM |
institution |
UFSM |
reponame_str |
Biblioteca Digital de Teses e Dissertações do UFSM |
collection |
Biblioteca Digital de Teses e Dissertações do UFSM |
bitstream.url.fl_str_mv |
http://repositorio.ufsm.br/bitstream/1/26453/2/license_rdf http://repositorio.ufsm.br/bitstream/1/26453/1/TES_PPGFISICA_2022_SCHNEIDER_ANGELICA.pdf http://repositorio.ufsm.br/bitstream/1/26453/3/license.txt |
bitstream.checksum.fl_str_mv |
4460e5956bc1d1639be9ae6146a50347 652c39330f67768289683f4a7f9844ef 2f0571ecee68693bd5cd3f17c1e075df |
bitstream.checksumAlgorithm.fl_str_mv |
MD5 MD5 MD5 |
repository.name.fl_str_mv |
Biblioteca Digital de Teses e Dissertações do UFSM - Universidade Federal de Santa Maria (UFSM) |
repository.mail.fl_str_mv |
atendimento.sib@ufsm.br||tedebc@gmail.com |
_version_ |
1793240099834560512 |