Propriedades eletrônicas em nanoestruturas de bicamada de grafeno
| Ano de defesa: | 2025 |
|---|---|
| Autor(a) principal: | |
| Orientador(a): | |
| Banca de defesa: | |
| Tipo de documento: | Tese |
| Tipo de acesso: | Acesso aberto |
| Idioma: | por |
| Instituição de defesa: |
Não Informado pela instituição
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| Programa de Pós-Graduação: |
Não Informado pela instituição
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| Departamento: |
Não Informado pela instituição
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| País: |
Não Informado pela instituição
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| Área do conhecimento CNPq: | |
| Link de acesso: | http://repositorio.ufc.br/handle/riufc/80299 |
Resumo: | In this work, we investigate the electronic properties in bilayer graphene quantum dot and quantum ring (BLG QDs and QRs, respectively), considering both the usual stacking between the layers, i.e. the so-called Bernal AB type, and the stackings resulting from effective rotations between layers, which lead to the formation of interference patterns known as moiré patterns. In the first study, which considers the usual stacking (AB type), we systematically analyze the energy levels and probability densities for the π band eléctrons in BLG QRs. The nanostructures were defined for different geometries, edge types, and arrangements between the inner and outer edges. Additionally, we investigate how the energy levels are modified by the inclusion of a homogeneous magnetic field perpendicular to the plane of the rings. For this, we use a tight-binding model for first neighbors, and the numerical results were compared with those from the literature on graphene QDs in both monolayer and bilayer configurations, as well as graphene QRs in monolayer, highlighting the electronic similarities and differences between these structures. Next, in the second study, we address the electronic behavior in QDs and QRs in twisted bilayer graphene (tBLG) under the influence of a perpendicular magnetic field. Our results indicate that, for rotation angles θ close to 0◦ or 60◦, the energy spectra exhibit features originating from the interaction of AA and AB/BA stacking orders, responsible for the formation of the moiré pattern in tBLG. For rotation angles between 10◦ and 50◦, the low-energy levels are found to be practically independent of the rotation angle. In the absence of a magnetic field, the energy levels of the QRs follow a power law as a function of the ring width, with the exponent varying from 1 to 2, depending on the rotation angle. Even more interestingly, the lowest energy states of the tBLG QRs oscillate as a function of the average radius Rm, with an oscillation period that approximately coincides with half the moiré period. When an intense magnetic field is applied, the lowest energy levels in the tBLG QDs and QRs align almost identically, regardless of whether the outer radius of the quantum confinement structure is smaller than or equivalent to the moiré period. This phenomenon can be attributed to the interlayer between the trigonal warping effect and the preferred location of the eigenstates. Our results provide valuable insights into the moiré pattern in tBLG and its role in the confinement of charged particles. Both studies developed in this thesis elucidate the electronic properties in BLG with great potential for applications in optoelectronic devices. |
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Bandeira, Nathanaell SousaCosta, Diego Rabelo daChaves, Andrey2025-04-07T11:59:04Z2025-04-07T11:59:04Z2025BANDEIRA, N. S. Propriedades eletrônicas em nanoestruturas de bicamada de grafeno. Tese (Doutorado em Física: Física da Matéria Condensada) - Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2025.http://repositorio.ufc.br/handle/riufc/80299In this work, we investigate the electronic properties in bilayer graphene quantum dot and quantum ring (BLG QDs and QRs, respectively), considering both the usual stacking between the layers, i.e. the so-called Bernal AB type, and the stackings resulting from effective rotations between layers, which lead to the formation of interference patterns known as moiré patterns. In the first study, which considers the usual stacking (AB type), we systematically analyze the energy levels and probability densities for the π band eléctrons in BLG QRs. The nanostructures were defined for different geometries, edge types, and arrangements between the inner and outer edges. Additionally, we investigate how the energy levels are modified by the inclusion of a homogeneous magnetic field perpendicular to the plane of the rings. For this, we use a tight-binding model for first neighbors, and the numerical results were compared with those from the literature on graphene QDs in both monolayer and bilayer configurations, as well as graphene QRs in monolayer, highlighting the electronic similarities and differences between these structures. Next, in the second study, we address the electronic behavior in QDs and QRs in twisted bilayer graphene (tBLG) under the influence of a perpendicular magnetic field. Our results indicate that, for rotation angles θ close to 0◦ or 60◦, the energy spectra exhibit features originating from the interaction of AA and AB/BA stacking orders, responsible for the formation of the moiré pattern in tBLG. For rotation angles between 10◦ and 50◦, the low-energy levels are found to be practically independent of the rotation angle. In the absence of a magnetic field, the energy levels of the QRs follow a power law as a function of the ring width, with the exponent varying from 1 to 2, depending on the rotation angle. Even more interestingly, the lowest energy states of the tBLG QRs oscillate as a function of the average radius Rm, with an oscillation period that approximately coincides with half the moiré period. When an intense magnetic field is applied, the lowest energy levels in the tBLG QDs and QRs align almost identically, regardless of whether the outer radius of the quantum confinement structure is smaller than or equivalent to the moiré period. This phenomenon can be attributed to the interlayer between the trigonal warping effect and the preferred location of the eigenstates. Our results provide valuable insights into the moiré pattern in tBLG and its role in the confinement of charged particles. Both studies developed in this thesis elucidate the electronic properties in BLG with great potential for applications in optoelectronic devices.Neste trabalho, investigamos as propriedades eletrônicas em nanoestruturas de pontos e anéis quânticos de bicamada de grafeno (BLG QDs e QRs, respectivamente), considerando tanto o empilhamento usual entre as camadas, do tipo Bernal AB, quanto os empilhamentos resultantes de rotações efetivas entre camadas, o que leva à formação de padrões de interferência conhecidos como padrões de moiré. No primeiro estudo, que considera o empilhamento usual (tipo AB), analisamos sistematicamente os níveis de energia e as densidades de probabilidade para o elétrons da banda π em BLG QRs. As nanoestruturas foram definidas para diferentes geometrias, tipos de borda e arranjos entre as bordas internas e externas. Além disso, investigamos como os níveis de energia se modificam pela inclusão de um campo magnético homogêneo e perpendicular ao plano dos anéis. Para isso, utilizamos um modelo tight-binding para primeiros vizinhos, cujos resultados numéricos foram comparados aos da literatura sobre QDs de grafeno em monocamada e bicamada, bem como QRs de grafeno em monocamada, destacando as semelhanças e diferenças eletrônicas entre essas estruturas. Em sequência, no segundo estudo, abordamos o comportamento eletrônico em QDs e QRs em BLG rotacionada (tBLG) sob a influência de um campo magnético perpendicular. Nossos resultados indicam que, para ângulos de rotação θ próximos a 0◦ ou 60◦, os espectros de energia apresentam características originadas pela interação das ordens de empilhamento AA e AB/BA, responsáveis pela formação do padrão moiré no tBLG. Já para ângulos de rotação entre 10◦ e 50◦, os níveis de energia de baixa energia se mostram praticamente independentes do ângulo de rotação. Na ausência de campo magnético, os níveis de energia dos QRs seguem uma lei de potência como função da espessura, com o expoente variando de 1 a 2, dependendo do ângulo de rotação. Mais interessante ainda, os estados de mais baixa energia dos QRs de tBLG oscilam conforme o raio médio Rm, com um período de oscilação que coincide aproximadamente com metade do período do moiré. Quando um campo magnético intenso é aplicado, os níveis de energia mais baixos nos QDs e QRs de tBLG se alinham de forma quase idêntica, independentemente do raio externo da estrutura de confinamento quântico ser menor ou equivalente ao período do Moiré. Esse fenômeno pode ser atribuído à interação entre o efeito trigonal warping e a localização preferencial dos autoestados. Nossos resultados fornecem informações valiosas sobre o padrão moiré no tBLG e o papel desse padrão no confinamento de partículas carregadas. Ambos trabalhos desenvolvidos nesta tese elucidam propriedades eletrônicas em BLG com grande potencial de aplicação em dispositivos de optoeletrônica.BANDEIRA, N. S. Propriedades eletrônicas em nanoestruturas de bicamada de grafeno. Tese (Doutorado em Física: Física da Matéria Condensada) - Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2025.Propriedades eletrônicas em nanoestruturas de bicamada de grafenoinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/doctoralThesisPropriedades eletrônicasBicamada de grafeno rotacionadaPontos quânticosAnéis quânticosElectronic propertiesTwisted bilayer grapheneQuantum dotsQuantum ringsCNPQ::CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADAinfo:eu-repo/semantics/openAccessporreponame:Repositório Institucional da Universidade Federal do Ceará (UFC)instname:Universidade Federal do Ceará (UFC)instacron:UFC2025ORIGINAL2025_tese_nsbandeira.pdf2025_tese_nsbandeira.pdfapplication/pdf59077328http://repositorio.ufc.br/bitstream/riufc/80299/3/2025_tese_nsbandeira.pdf56e253c7d5a401b0030683bef0af3b46MD53LICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://repositorio.ufc.br/bitstream/riufc/80299/4/license.txt8a4605be74aa9ea9d79846c1fba20a33MD54riufc/802992025-04-07 08:59:06.106oai:repositorio.ufc.br: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Repositório InstitucionalPUBhttp://www.repositorio.ufc.br/ri-oai/requestbu@ufc.br || repositorio@ufc.bropendoar:2025-04-07T11:59:06Repositório Institucional da Universidade Federal do Ceará (UFC) - Universidade Federal do Ceará (UFC)false |
| dc.title.pt_BR.fl_str_mv |
Propriedades eletrônicas em nanoestruturas de bicamada de grafeno |
| title |
Propriedades eletrônicas em nanoestruturas de bicamada de grafeno |
| spellingShingle |
Propriedades eletrônicas em nanoestruturas de bicamada de grafeno Bandeira, Nathanaell Sousa CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA Propriedades eletrônicas Bicamada de grafeno rotacionada Pontos quânticos Anéis quânticos Electronic properties Twisted bilayer graphene Quantum dots Quantum rings |
| title_short |
Propriedades eletrônicas em nanoestruturas de bicamada de grafeno |
| title_full |
Propriedades eletrônicas em nanoestruturas de bicamada de grafeno |
| title_fullStr |
Propriedades eletrônicas em nanoestruturas de bicamada de grafeno |
| title_full_unstemmed |
Propriedades eletrônicas em nanoestruturas de bicamada de grafeno |
| title_sort |
Propriedades eletrônicas em nanoestruturas de bicamada de grafeno |
| author |
Bandeira, Nathanaell Sousa |
| author_facet |
Bandeira, Nathanaell Sousa |
| author_role |
author |
| dc.contributor.co-advisor.none.fl_str_mv |
Costa, Diego Rabelo da |
| dc.contributor.author.fl_str_mv |
Bandeira, Nathanaell Sousa |
| dc.contributor.advisor1.fl_str_mv |
Chaves, Andrey |
| contributor_str_mv |
Chaves, Andrey |
| dc.subject.cnpq.fl_str_mv |
CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA |
| topic |
CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA Propriedades eletrônicas Bicamada de grafeno rotacionada Pontos quânticos Anéis quânticos Electronic properties Twisted bilayer graphene Quantum dots Quantum rings |
| dc.subject.ptbr.pt_BR.fl_str_mv |
Propriedades eletrônicas Bicamada de grafeno rotacionada Pontos quânticos Anéis quânticos |
| dc.subject.en.pt_BR.fl_str_mv |
Electronic properties Twisted bilayer graphene Quantum dots Quantum rings |
| description |
In this work, we investigate the electronic properties in bilayer graphene quantum dot and quantum ring (BLG QDs and QRs, respectively), considering both the usual stacking between the layers, i.e. the so-called Bernal AB type, and the stackings resulting from effective rotations between layers, which lead to the formation of interference patterns known as moiré patterns. In the first study, which considers the usual stacking (AB type), we systematically analyze the energy levels and probability densities for the π band eléctrons in BLG QRs. The nanostructures were defined for different geometries, edge types, and arrangements between the inner and outer edges. Additionally, we investigate how the energy levels are modified by the inclusion of a homogeneous magnetic field perpendicular to the plane of the rings. For this, we use a tight-binding model for first neighbors, and the numerical results were compared with those from the literature on graphene QDs in both monolayer and bilayer configurations, as well as graphene QRs in monolayer, highlighting the electronic similarities and differences between these structures. Next, in the second study, we address the electronic behavior in QDs and QRs in twisted bilayer graphene (tBLG) under the influence of a perpendicular magnetic field. Our results indicate that, for rotation angles θ close to 0◦ or 60◦, the energy spectra exhibit features originating from the interaction of AA and AB/BA stacking orders, responsible for the formation of the moiré pattern in tBLG. For rotation angles between 10◦ and 50◦, the low-energy levels are found to be practically independent of the rotation angle. In the absence of a magnetic field, the energy levels of the QRs follow a power law as a function of the ring width, with the exponent varying from 1 to 2, depending on the rotation angle. Even more interestingly, the lowest energy states of the tBLG QRs oscillate as a function of the average radius Rm, with an oscillation period that approximately coincides with half the moiré period. When an intense magnetic field is applied, the lowest energy levels in the tBLG QDs and QRs align almost identically, regardless of whether the outer radius of the quantum confinement structure is smaller than or equivalent to the moiré period. This phenomenon can be attributed to the interlayer between the trigonal warping effect and the preferred location of the eigenstates. Our results provide valuable insights into the moiré pattern in tBLG and its role in the confinement of charged particles. Both studies developed in this thesis elucidate the electronic properties in BLG with great potential for applications in optoelectronic devices. |
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2025 |
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2025-04-07T11:59:04Z |
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2025-04-07T11:59:04Z |
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2025 |
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info:eu-repo/semantics/doctoralThesis |
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BANDEIRA, N. S. Propriedades eletrônicas em nanoestruturas de bicamada de grafeno. Tese (Doutorado em Física: Física da Matéria Condensada) - Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2025. |
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http://repositorio.ufc.br/handle/riufc/80299 |
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BANDEIRA, N. S. Propriedades eletrônicas em nanoestruturas de bicamada de grafeno. Tese (Doutorado em Física: Física da Matéria Condensada) - Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2025. |
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