Structural and electronic properties of two-dimensional multiphase indium selenide crystals

Detalhes bibliográficos
Ano de defesa: 2023
Autor(a) principal: Guilherme Rodrigues Fontenele
Orientador(a): Não Informado pela instituição
Banca de defesa: Não Informado pela instituição
Tipo de documento: Dissertação
Tipo de acesso: Acesso aberto
Idioma: eng
Instituição de defesa: Universidade Federal de Minas Gerais
Programa de Pós-Graduação: Não Informado pela instituição
Departamento: Não Informado pela instituição
País: Não Informado pela instituição
Palavras-chave em Português:
Link de acesso: https://hdl.handle.net/1843/77651
Resumo: We successfully obtained two indium selenide crystals, with each of the samples having a different proportion of phases and polymorphs. From X-ray diffraction and electron backscattered diffraction measurements, we were able to quantify the proportion of phases in both the volume and surface regions of the crystals. Through microscopy measurements and tunneling spectroscopy, we were able to obtain high-resolution images of the lamellar structures at the nanometer scale, as well as determine the electronic densities of states of InSe and In2Se3, for each phase and polymorph.
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spelling 2024-10-25T13:13:04Z2025-09-09T00:12:02Z2024-10-25T13:13:04Z2023-09-11https://hdl.handle.net/1843/77651We successfully obtained two indium selenide crystals, with each of the samples having a different proportion of phases and polymorphs. From X-ray diffraction and electron backscattered diffraction measurements, we were able to quantify the proportion of phases in both the volume and surface regions of the crystals. Through microscopy measurements and tunneling spectroscopy, we were able to obtain high-resolution images of the lamellar structures at the nanometer scale, as well as determine the electronic densities of states of InSe and In2Se3, for each phase and polymorph.CNPq - Conselho Nacional de Desenvolvimento Científico e TecnológicoFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas GeraisCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível SuperiorINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)engUniversidade Federal de Minas GeraisScanning tunneling microscopyScanning tunneling spectroscopyIndium selenideSemiconductorsElectron backscatter diffractionMicroscopia de tunelamento de varreduraSemicondutoresDifraçãoStructural and electronic properties of two-dimensional multiphase indium selenide crystalsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisGuilherme Rodrigues Fonteneleinfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFMGinstname:Universidade Federal de Minas Gerais (UFMG)instacron:UFMGhttp://lattes.cnpq.br/2259847784299613Rogerio Magalhães Paniagohttp://lattes.cnpq.br/7447944106455097Angelo Malachias de SouzaEdmar Avellar SoaresRoberto Hiroki MiwaIn this work, we present the growth and the structural and electronic properties of two-dimensional phases and polymorphs of indium selenide, specifically the InSe and In2Se3 compounds. The two samples synthesized for this study were obtained by the Bridgman method, employing two distinct approaches in the thermodynamic conditions of growth. In addition to structural characterization techniques, we employed tunneling microscopy and spectroscopy techniques to obtain the correlation between structural and electronic information. This allowed the investigation of the local electronic density of states of the different phases and polymorphs of this material. We begin the dissertation by presenting a literature review on the two-dimensional phases of InSe and In2Se3. The polymorphs of the In2Se3 phase are characterized by the stacking of quintuple layers of indium and selenium, while the structure of InSe is characterized by stacked tetralayers. These materials present a wide variety of structural and electronic properties and are important candidates for various applications, such as solar cells, transistors, ferroelectric memories, gas sensors, etc. Finally, we present the most important experimental techniques used in this work. We discuss the Bridgman crystal growth method and analytical techniques of scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, electron backscattered diffraction, and tunneling microscopy/spectroscopy. Neste trabalho, apresentamos o crescimento e as propriedades estruturais e eletrônicas de diferentes fases e polimorfos bidimensionais de seleneto de índio, mais especificamente os compostos InSe e In2Se3. As duas amostras sintetizadas para este estudo foram obtidas por meio do método de Bridgman, empregando duas abordagens distintas nas condições termodinâmicas de crescimento. Além de técnicas de caracterização estrutural, empregamos técnicas de microscopia e espectroscopia de tunelamento a fim de obter a correlação entre informações estruturais e eletrônicas, permitindo a investigação da densidade local de estados eletrônicos das diferentes fases e polimorfos deste material. Começamos a dissertação apresentando uma revisão da literatura a respeito das fases bidimensionais de InSe e In2Se3. Os polimorfos da fase In2Se3 são caracterizados pelo empilhamento de pentacamadas de índio e selênio, enquanto as estruturas de InSe se caracterizam por tetracamadas empilhadas de índio e selênio. Estes materiais apresentam uma grande variedade estrutural e eletrônica e, por isso, são importantes candidatos para diversas aplicações como células solares, transistores, memórias ferroelétricas, sensores de gás, etc. Finalmente, apresentamos as técnicas experimentais mais importantes utilizadas neste trabalho. Discutimos o método de crescimento de cristais Bridgman e técnicas analíticas de microscopia eletrônica de varredura, espectroscopia de raios-X por energia dispersiva, difração de raios-X, difração de elétrons retroespalhados e microscopia/espectroscopia de tunelamento. Obtivemos com sucesso dois cristais de seleneto de índio, com cada uma das amostras tendo uma proporção de fases e polimorfismos diferentes. A partir de medidas de difração de raios-X e de elétron retroespalhados, conseguimos quantificar a proporção de fases tanto no volume quanto em regiões superficiais na escala de mícrons de ambos os cristais. Através de medidas de microscopia e espectroscopia de tunelamento, conseguimos obter imagens de alta resolução das estruturas lamelares na escala nanométrica, assim como determinar a densidades de estados eletrônicos dos polimorfos de In2Se3 e InSe.https://orcid.org/0000-0002-3650-1101BrasilICX - DEPARTAMENTO DE FÍSICAPrograma de Pós-Graduação em FísicaUFMGORIGINALdiss-final-repositorio.pdfapplication/pdf7515772https://repositorio.ufmg.br//bitstreams/ce6c86fa-6e4d-4e54-93d3-ca852537b379/download8ad1adf7814953a72caa74252e613d6aMD51trueAnonymousREADLICENSElicense.txttext/plain2118https://repositorio.ufmg.br//bitstreams/81e70773-8b38-4f34-8330-1952f2f0077c/downloadcda590c95a0b51b4d15f60c9642ca272MD52falseAnonymousREAD1843/776512025-09-08 21:12:02.402open.accessoai:repositorio.ufmg.br:1843/77651https://repositorio.ufmg.br/Repositório InstitucionalPUBhttps://repositorio.ufmg.br/oairepositorio@ufmg.bropendoar:2025-09-09T00:12:02Repositório Institucional da UFMG - Universidade Federal de Minas Gerais (UFMG)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
dc.title.none.fl_str_mv Structural and electronic properties of two-dimensional multiphase indium selenide crystals
title Structural and electronic properties of two-dimensional multiphase indium selenide crystals
spellingShingle Structural and electronic properties of two-dimensional multiphase indium selenide crystals
Guilherme Rodrigues Fontenele
Microscopia de tunelamento de varredura
Semicondutores
Difração
Scanning tunneling microscopy
Scanning tunneling spectroscopy
Indium selenide
Semiconductors
Electron backscatter diffraction
title_short Structural and electronic properties of two-dimensional multiphase indium selenide crystals
title_full Structural and electronic properties of two-dimensional multiphase indium selenide crystals
title_fullStr Structural and electronic properties of two-dimensional multiphase indium selenide crystals
title_full_unstemmed Structural and electronic properties of two-dimensional multiphase indium selenide crystals
title_sort Structural and electronic properties of two-dimensional multiphase indium selenide crystals
author Guilherme Rodrigues Fontenele
author_facet Guilherme Rodrigues Fontenele
author_role author
dc.contributor.author.fl_str_mv Guilherme Rodrigues Fontenele
dc.subject.por.fl_str_mv Microscopia de tunelamento de varredura
Semicondutores
Difração
topic Microscopia de tunelamento de varredura
Semicondutores
Difração
Scanning tunneling microscopy
Scanning tunneling spectroscopy
Indium selenide
Semiconductors
Electron backscatter diffraction
dc.subject.other.none.fl_str_mv Scanning tunneling microscopy
Scanning tunneling spectroscopy
Indium selenide
Semiconductors
Electron backscatter diffraction
description We successfully obtained two indium selenide crystals, with each of the samples having a different proportion of phases and polymorphs. From X-ray diffraction and electron backscattered diffraction measurements, we were able to quantify the proportion of phases in both the volume and surface regions of the crystals. Through microscopy measurements and tunneling spectroscopy, we were able to obtain high-resolution images of the lamellar structures at the nanometer scale, as well as determine the electronic densities of states of InSe and In2Se3, for each phase and polymorph.
publishDate 2023
dc.date.issued.fl_str_mv 2023-09-11
dc.date.accessioned.fl_str_mv 2024-10-25T13:13:04Z
2025-09-09T00:12:02Z
dc.date.available.fl_str_mv 2024-10-25T13:13:04Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/masterThesis
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status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1843/77651
url https://hdl.handle.net/1843/77651
dc.language.iso.fl_str_mv eng
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dc.publisher.none.fl_str_mv Universidade Federal de Minas Gerais
publisher.none.fl_str_mv Universidade Federal de Minas Gerais
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFMG
instname:Universidade Federal de Minas Gerais (UFMG)
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