Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação
| Ano de defesa: | 2019 |
|---|---|
| Autor(a) principal: |
OLIVEIRA, Thomaz Amaral
 |
| Orientador(a): |
CONDELES, José Fernando
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| Banca de defesa: | |
| Tipo de documento: | Dissertação |
| Tipo de acesso: | Acesso aberto |
| Idioma: | por |
| Instituição de defesa: |
Universidade Federal do Triângulo Mineiro
|
| Programa de Pós-Graduação: |
Programa de Pós-Graduação Interdisciplinar em Biociências Aplicadas
|
| Departamento: |
Instituto de Ciências Biológicas e Naturais - ICBN
|
| País: |
Brasil
|
| Palavras-chave em Português: | |
| Palavras-chave em Inglês: | |
| Área do conhecimento CNPq: | |
| Link de acesso: | http://bdtd.uftm.edu.br/handle/tede/636 |
Resumo: | Semiconductor materials have several applications in the construction of electronic devices, such as diodes, transistors, capacitors and photoconductors. Several of these devices are currently used in medical and biological applications. Among these interdisciplinary applications, the potential use in the construction of ionizing radiation detectors is emphasized, whether in dosimetry or radiodiagnosis. The HgI2 (Mercuric Iodide) is an inorganic halide material, semiconductor and photoconductor, which presents high efficiency in the absorption of photons of high energy and collection of carriers of electric charges. It is listed as a good candidate in the construction of radiation detecting devices by the direct detection method at room temperature. However, the different methods of obtaining these materials, as well as the variation of the synthesis parameters can influence or modify the structural, optical and electrical properties of these materials. Thus, in this work an alternative assembly of the Spray technique will be analyzed and crystalline HgI2 semiconductor materials will be grown, directed to the use as radiation sensor, accompanied by the study of the structural and electrical properties of this material, as a function of the variation of the synthesis parameters. For this purpose, the material was grown in the form of films by method CVD (Chemical vapor deposition) and Spray technique using N, N-Dimethylformamide as a solvent of the HgI2 powder. The influence of the concentration of HgI2 solution (from 100 g / l to 250 g / l) and the deposition temperature (from 60ºC to 100ºC) on the final properties of the films was investigated. The technique demands low cost of equipment and may eventually become viable solution for the construction of such devices on a large scale. The structural characterizations were performed by Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), Energy Dispersion Spectroscopy (EDS) and Fourier-transform infrared spectroscopy (FTIR). The electrical characterizations were performed in the devices produced from the deposited films, by the measurement of electric transport as a function of the electric field. From the obtained results studies, the best conditions of production of these materials were found, directed to the use as radiation detectors. Briefly, the present work presents original results, constituting a new combination of materials and techniques, ranging from the synthesis and deposition of films, including the assembly of the deposition system used, to results of structural and electrical characterization of the films. |
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CONDELES, José Fernandohttp://lattes.cnpq.br/3904831299794794http://lattes.cnpq.br/6588083672479003OLIVEIRA, Thomaz Amaral2019-04-23T17:38:39Z2019-03-11OLIVEIRA, Thomaz Amaral. Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação. 2019. 93f. Dissertação (Mestrado em Biociências Aplicadas) - Programa de Pós-Graduação Interdisciplinar em Biociências Aplicadas, Universidade Federal do Triângulo Mineiro, Uberaba, 2019.http://bdtd.uftm.edu.br/handle/tede/636Semiconductor materials have several applications in the construction of electronic devices, such as diodes, transistors, capacitors and photoconductors. Several of these devices are currently used in medical and biological applications. Among these interdisciplinary applications, the potential use in the construction of ionizing radiation detectors is emphasized, whether in dosimetry or radiodiagnosis. The HgI2 (Mercuric Iodide) is an inorganic halide material, semiconductor and photoconductor, which presents high efficiency in the absorption of photons of high energy and collection of carriers of electric charges. It is listed as a good candidate in the construction of radiation detecting devices by the direct detection method at room temperature. However, the different methods of obtaining these materials, as well as the variation of the synthesis parameters can influence or modify the structural, optical and electrical properties of these materials. Thus, in this work an alternative assembly of the Spray technique will be analyzed and crystalline HgI2 semiconductor materials will be grown, directed to the use as radiation sensor, accompanied by the study of the structural and electrical properties of this material, as a function of the variation of the synthesis parameters. For this purpose, the material was grown in the form of films by method CVD (Chemical vapor deposition) and Spray technique using N, N-Dimethylformamide as a solvent of the HgI2 powder. The influence of the concentration of HgI2 solution (from 100 g / l to 250 g / l) and the deposition temperature (from 60ºC to 100ºC) on the final properties of the films was investigated. The technique demands low cost of equipment and may eventually become viable solution for the construction of such devices on a large scale. The structural characterizations were performed by Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), Energy Dispersion Spectroscopy (EDS) and Fourier-transform infrared spectroscopy (FTIR). The electrical characterizations were performed in the devices produced from the deposited films, by the measurement of electric transport as a function of the electric field. From the obtained results studies, the best conditions of production of these materials were found, directed to the use as radiation detectors. Briefly, the present work presents original results, constituting a new combination of materials and techniques, ranging from the synthesis and deposition of films, including the assembly of the deposition system used, to results of structural and electrical characterization of the films.Os materiais semicondutores possuem diversas aplicações na construção de dispositivos eletrônicos, tais como diodos, transistores, capacitores e fotocondutores. Vários desses dispositivos são atualmente usados em aplicações interdisciplinares nas áreas médica e biológica. Dentre essas aplicações destaca-se o potencial uso na construção de detectores de radiação ionizante, seja na dosimetria ou radiodiagnóstico. O HgI2 (Iodeto de Mercúrio) é um material haleto inorgânico, semicondutor e fotocondutor, que apresenta alta eficiência na absorção de fótons de alta energia e coleta de portadores de cargas elétricas. É cotado como bom candidato na construção de dispositivos detectores de radiação pelo método direto de detecção à temperatura ambiente. Todavia os diferentes métodos de obtenção desses materiais, bem como a variação dos parâmetros de síntese podem influenciar ou modificar as propriedades estruturais, ópticas e elétricas desses materiais. Assim, neste trabalho será analisada uma montagem alternativa da técnica Spray e serão crescidos materiais semicondutores cristalinos de HgI2, direcionados para o uso como sensor de radiação, acompanhado do estudo das propriedades estruturais e elétricas desse material, em função da variação dos parâmetros de síntese. Para esse propósito o material foi crescido em forma de filmes pelo do método CVD (Deposição química por vapor) e técnica Spray usando N, N-Dimetilformamida como solvente do pó de HgI2. A influência da concentração de solução de HgI2 (de 100 g/l até 250g/l) e da temperatura de deposição (de 60°C até 100°C) sobre as propriedades finais dos filmes foi investigada.A técnica demanda baixo custo de equipamento e pode eventualmente tornar-se solução viável para a construção de dispositivos detectores de radiação em larga escala. As caracterizações estruturais foram realizadas por Microscopia de Força Atômica (AFM), Difração de Raios-X (DRX), Espectroscopia de dispersão de energia (EDS) e Espectroscopia no infravermelho com transformada de Fourier (FTIR). As caracterizações elétricas foram realizadas nos dispositivos produzidos a partir dos filmes depositados, pela medida de transporte elétrico em função do campo elétrico. A partir dos estudos dos resultados obtidos, foram encontradas as melhores condições de produção desses materiais, direcionados ao uso como detectores de radiação. Resumidamente, o presente trabalho apresenta resultados originais, constituindo de uma combinação nova de materiais e técnicas, que contemplam desde a síntese e deposição dos filmes, incluindo a montagem do sistema de deposição usado, até resultados de caracterizações estruturais e elétricas dos filmes.Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorapplication/pdfhttp://bdtd.uftm.edu.br/retrieve/3947/Dissert%20Thomaz%20A%20Oliveira.pdf.jpgporUniversidade Federal do Triângulo MineiroPrograma de Pós-Graduação Interdisciplinar em Biociências AplicadasUFTMBrasilInstituto de Ciências Biológicas e Naturais - ICBN1- CAMACHO, S. A., AOKI, P. H. B., CONSTANTINO, C. J. L., PIRES, A. M.. Sprayed films of europium complexes toward light conversion devices. 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| dc.title.por.fl_str_mv |
Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação |
| title |
Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação |
| spellingShingle |
Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação OLIVEIRA, Thomaz Amaral Detectores. Raios-X. Filmes Finos. Semicondutores. Detectors. X-Rays. Thin Films. Semiconductors. Materiais |
| title_short |
Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação |
| title_full |
Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação |
| title_fullStr |
Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação |
| title_full_unstemmed |
Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação |
| title_sort |
Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação |
| author |
OLIVEIRA, Thomaz Amaral |
| author_facet |
OLIVEIRA, Thomaz Amaral |
| author_role |
author |
| dc.contributor.advisor1.fl_str_mv |
CONDELES, José Fernando |
| dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/3904831299794794 |
| dc.contributor.authorLattes.fl_str_mv |
http://lattes.cnpq.br/6588083672479003 |
| dc.contributor.author.fl_str_mv |
OLIVEIRA, Thomaz Amaral |
| contributor_str_mv |
CONDELES, José Fernando |
| dc.subject.por.fl_str_mv |
Detectores. Raios-X. Filmes Finos. Semicondutores. |
| topic |
Detectores. Raios-X. Filmes Finos. Semicondutores. Detectors. X-Rays. Thin Films. Semiconductors. Materiais |
| dc.subject.eng.fl_str_mv |
Detectors. X-Rays. Thin Films. Semiconductors. |
| dc.subject.cnpq.fl_str_mv |
Materiais |
| description |
Semiconductor materials have several applications in the construction of electronic devices, such as diodes, transistors, capacitors and photoconductors. Several of these devices are currently used in medical and biological applications. Among these interdisciplinary applications, the potential use in the construction of ionizing radiation detectors is emphasized, whether in dosimetry or radiodiagnosis. The HgI2 (Mercuric Iodide) is an inorganic halide material, semiconductor and photoconductor, which presents high efficiency in the absorption of photons of high energy and collection of carriers of electric charges. It is listed as a good candidate in the construction of radiation detecting devices by the direct detection method at room temperature. However, the different methods of obtaining these materials, as well as the variation of the synthesis parameters can influence or modify the structural, optical and electrical properties of these materials. Thus, in this work an alternative assembly of the Spray technique will be analyzed and crystalline HgI2 semiconductor materials will be grown, directed to the use as radiation sensor, accompanied by the study of the structural and electrical properties of this material, as a function of the variation of the synthesis parameters. For this purpose, the material was grown in the form of films by method CVD (Chemical vapor deposition) and Spray technique using N, N-Dimethylformamide as a solvent of the HgI2 powder. The influence of the concentration of HgI2 solution (from 100 g / l to 250 g / l) and the deposition temperature (from 60ºC to 100ºC) on the final properties of the films was investigated. The technique demands low cost of equipment and may eventually become viable solution for the construction of such devices on a large scale. The structural characterizations were performed by Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), Energy Dispersion Spectroscopy (EDS) and Fourier-transform infrared spectroscopy (FTIR). The electrical characterizations were performed in the devices produced from the deposited films, by the measurement of electric transport as a function of the electric field. From the obtained results studies, the best conditions of production of these materials were found, directed to the use as radiation detectors. Briefly, the present work presents original results, constituting a new combination of materials and techniques, ranging from the synthesis and deposition of films, including the assembly of the deposition system used, to results of structural and electrical characterization of the films. |
| publishDate |
2019 |
| dc.date.accessioned.fl_str_mv |
2019-04-23T17:38:39Z |
| dc.date.issued.fl_str_mv |
2019-03-11 |
| dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
| dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
| format |
masterThesis |
| status_str |
publishedVersion |
| dc.identifier.citation.fl_str_mv |
OLIVEIRA, Thomaz Amaral. Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação. 2019. 93f. Dissertação (Mestrado em Biociências Aplicadas) - Programa de Pós-Graduação Interdisciplinar em Biociências Aplicadas, Universidade Federal do Triângulo Mineiro, Uberaba, 2019. |
| dc.identifier.uri.fl_str_mv |
http://bdtd.uftm.edu.br/handle/tede/636 |
| identifier_str_mv |
OLIVEIRA, Thomaz Amaral. Crescimento de materiais semicondutores cristalinos de iodeto de mercúrio para aplicações como detectores de radiação. 2019. 93f. Dissertação (Mestrado em Biociências Aplicadas) - Programa de Pós-Graduação Interdisciplinar em Biociências Aplicadas, Universidade Federal do Triângulo Mineiro, Uberaba, 2019. |
| url |
http://bdtd.uftm.edu.br/handle/tede/636 |
| dc.language.iso.fl_str_mv |
por |
| language |
por |
| dc.relation.references.por.fl_str_mv |
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