Propriedades eletrônicas em nanoestruturas de mono e bicamada de grafeno calculadas via modelo tight binding.

Detalhes bibliográficos
Ano de defesa: 2018
Autor(a) principal: Bandeira, Nathanaell Sousa
Orientador(a): Chaves, Andrey
Banca de defesa: Não Informado pela instituição
Tipo de documento: Dissertação
Tipo de acesso: Acesso aberto
Idioma: por
Instituição de defesa: Não Informado pela instituição
Programa de Pós-Graduação: Não Informado pela instituição
Departamento: Não Informado pela instituição
País: Não Informado pela instituição
Palavras-chave em Português:
Link de acesso: http://www.repositorio.ufc.br/handle/riufc/49064
Resumo: In this work, we investigate the electronic properties of confined systems, subject to mechanical perturbation and external potentials in a mono and bilayer graphene using the tight-binding model. Two types of nanostructures were investigated: mono and bilayer nanoribbon of graphene with armchair and zigzag edges, and quantum rings bilayer graphene with different geometric shapes and edges. For monolayer graphene nanoribbons, we induced a simple shear in the structure, with or without constant electric field in the plane, thereby investigating the effects on the energy spectrum. The additive effect of these pertubation opens a gap in the band struture, making the armchair semiconductor ribbon in large thickness scales. In this way we analyze how external parameters such as simple shear strain (γ) and electric field (F), modulate the gap of energy. For bilayer graphene nanoribbon, we analyze the dispersion relation for structures subjected to simple shear strain, with equal intensities in both layers plus electric field perpendicular to the plane of the layers. We verified that the effective action of the simple shear strain modifies the energy levels in a qualitative way to that observed in monolayer graphene nanoribbons, and associating this perturbation with the effect of the electric field perpendicular to the plane, we observed that Bernal stacked in nanoribbon (AB) also exhibit the possibility of modulating the magnitude of the energy gap, making non-gap configurations (ie metal ribbon) into semiconductors. In addition to the work on nanostructures, we developed a systematic study for Bernal-type stacking quantum rings bilayer graphene, investigating the energy and probability density spectra for rings with different types of geometry, edges, inner edge alignment and external, in the presence or absence of magnetic field perpendicular to the structure. Thus, we compare the theoretical results obtained with those reported in the literature for quantum rings in monolayer graphene , highlighting the similarities and differences between the characteristics of such confinement structures.
id UFC-7_d8bd393a91b722f16a39455e22230b00
oai_identifier_str oai:repositorio.ufc.br:riufc/49064
network_acronym_str UFC-7
network_name_str Repositório Institucional da Universidade Federal do Ceará (UFC)
repository_id_str
spelling Bandeira, Nathanaell SousaCosta, Diego Rabelo daSena, Silvia Helena Roberto deChaves, Andrey2019-12-26T16:35:35Z2019-12-26T16:35:35Z2018BANDEIRA, N. S. Propriedades eletrônicas em nanoestruturas mono e bicamada de grafeno via modelo tight binding. 2018, 101 f. Dissertação (Mestrado em Física) - Universidade Federal do Ceará, Fortaleza, 2018.http://www.repositorio.ufc.br/handle/riufc/49064In this work, we investigate the electronic properties of confined systems, subject to mechanical perturbation and external potentials in a mono and bilayer graphene using the tight-binding model. Two types of nanostructures were investigated: mono and bilayer nanoribbon of graphene with armchair and zigzag edges, and quantum rings bilayer graphene with different geometric shapes and edges. For monolayer graphene nanoribbons, we induced a simple shear in the structure, with or without constant electric field in the plane, thereby investigating the effects on the energy spectrum. The additive effect of these pertubation opens a gap in the band struture, making the armchair semiconductor ribbon in large thickness scales. In this way we analyze how external parameters such as simple shear strain (γ) and electric field (F), modulate the gap of energy. For bilayer graphene nanoribbon, we analyze the dispersion relation for structures subjected to simple shear strain, with equal intensities in both layers plus electric field perpendicular to the plane of the layers. We verified that the effective action of the simple shear strain modifies the energy levels in a qualitative way to that observed in monolayer graphene nanoribbons, and associating this perturbation with the effect of the electric field perpendicular to the plane, we observed that Bernal stacked in nanoribbon (AB) also exhibit the possibility of modulating the magnitude of the energy gap, making non-gap configurations (ie metal ribbon) into semiconductors. In addition to the work on nanostructures, we developed a systematic study for Bernal-type stacking quantum rings bilayer graphene, investigating the energy and probability density spectra for rings with different types of geometry, edges, inner edge alignment and external, in the presence or absence of magnetic field perpendicular to the structure. Thus, we compare the theoretical results obtained with those reported in the literature for quantum rings in monolayer graphene , highlighting the similarities and differences between the characteristics of such confinement structures.Neste trabalho, investigamos as propriedades eletrônicas de sistemas confinados, sujeitos a perturbações mecânicas e potenciais externos em nanoestruturas de mono e bicamada de grafeno por meio do modelo tight − binding. Dois tipos de nanoestruturas foram investigadas: nanofitas em mono e bicamada de grafeno com bordas armchair e zigzag, e anéis quânticos de bicamada de grafeno com diferentes formas geométricas e bordas. Para as nanofitas em monocamada de grafeno, foi aplicado uma deformação tipo cisalhamento simples na estrutura, na presença ou não de campo elétrico constante no plano, investigando dessa forma os efeitos no espectro de energia: o efeito aditivo dessas perturbações abre um gap na relação de dispersão, tornando nanofita armchair semicondutora em grandes escalas de espessura, analisando assim como parâmetros externos, tensão de cisalhamento simples (γ) e campo elétrico (F), modulam o gap de energia. Para nanofitas em bicamada de grafeno, analisamos a relação de dispersão para estruturas submetidas a tensão cisalhamento simples, com intensidades iguais em ambas camadas, mais a adição de campo elétrico perpendicular ao plano das camadas. Verificamos que a ação efetiva da tensão de cisalhamento simples, modifica os níveis de energia de maneira qualitativa ao observado em nanofitas em monocamada de grafeno, e associando essa pertubação ao efeito do campo elétrico perpendicular ao plano, observamos que nanofitas com empilhamento do tipo Bernal (AB), exibem a possibilidade de modular a magnitude do gap de energia, tornando configurações com ausência de gap (isto é, nanofitas metálicas) em semicondutoras. Em adição aos trabalhos em nanoestruturas, desenvolvemos um estudo sistemático para anéis quânticos de bicamada de grafeno com empilhamento do tipo Bernal (AB), investigando os espectros de energia e densidade de probabilidade para anéis com diferentes tipos de geometria, bordas, alinhamento entre bordas interna e externa, na presença ou ausência de campo magnético perpendicular à estrutura. Dessa maneira, comparamos os resultados teóricos obtidos com os reportados na literatura para anéis quânticos em monocamadas de grafeno, destacando as similaridades e diferenças entre as características de tais estruturas de confinamento.GrafenoNanofitasAnéis quânticosDeformação de cisalhamento simplesPotenciais externosPropriedades eletrônicas em nanoestruturas de mono e bicamada de grafeno calculadas via modelo tight binding.info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisporreponame:Repositório Institucional da Universidade Federal do Ceará (UFC)instname:Universidade Federal do Ceará (UFC)instacron:UFCinfo:eu-repo/semantics/openAccessORIGINAL2018_dis_nsbandeira.pdf2018_dis_nsbandeira.pdfapplication/pdf27370147http://repositorio.ufc.br/bitstream/riufc/49064/1/2018_dis_nsbandeira.pdf9dec3a2a1dc362498c376467d78142a7MD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://repositorio.ufc.br/bitstream/riufc/49064/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52riufc/490642020-02-20 14:17:22.96oai:repositorio.ufc.br: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Repositório InstitucionalPUBhttp://www.repositorio.ufc.br/ri-oai/requestbu@ufc.br || repositorio@ufc.bropendoar:2020-02-20T17:17:22Repositório Institucional da Universidade Federal do Ceará (UFC) - Universidade Federal do Ceará (UFC)false
dc.title.pt_BR.fl_str_mv Propriedades eletrônicas em nanoestruturas de mono e bicamada de grafeno calculadas via modelo tight binding.
title Propriedades eletrônicas em nanoestruturas de mono e bicamada de grafeno calculadas via modelo tight binding.
spellingShingle Propriedades eletrônicas em nanoestruturas de mono e bicamada de grafeno calculadas via modelo tight binding.
Bandeira, Nathanaell Sousa
Grafeno
Nanofitas
Anéis quânticos
Deformação de cisalhamento simples
Potenciais externos
title_short Propriedades eletrônicas em nanoestruturas de mono e bicamada de grafeno calculadas via modelo tight binding.
title_full Propriedades eletrônicas em nanoestruturas de mono e bicamada de grafeno calculadas via modelo tight binding.
title_fullStr Propriedades eletrônicas em nanoestruturas de mono e bicamada de grafeno calculadas via modelo tight binding.
title_full_unstemmed Propriedades eletrônicas em nanoestruturas de mono e bicamada de grafeno calculadas via modelo tight binding.
title_sort Propriedades eletrônicas em nanoestruturas de mono e bicamada de grafeno calculadas via modelo tight binding.
author Bandeira, Nathanaell Sousa
author_facet Bandeira, Nathanaell Sousa
author_role author
dc.contributor.co-advisor.none.fl_str_mv Costa, Diego Rabelo da
Sena, Silvia Helena Roberto de
dc.contributor.author.fl_str_mv Bandeira, Nathanaell Sousa
dc.contributor.advisor1.fl_str_mv Chaves, Andrey
contributor_str_mv Chaves, Andrey
dc.subject.por.fl_str_mv Grafeno
Nanofitas
Anéis quânticos
Deformação de cisalhamento simples
Potenciais externos
topic Grafeno
Nanofitas
Anéis quânticos
Deformação de cisalhamento simples
Potenciais externos
description In this work, we investigate the electronic properties of confined systems, subject to mechanical perturbation and external potentials in a mono and bilayer graphene using the tight-binding model. Two types of nanostructures were investigated: mono and bilayer nanoribbon of graphene with armchair and zigzag edges, and quantum rings bilayer graphene with different geometric shapes and edges. For monolayer graphene nanoribbons, we induced a simple shear in the structure, with or without constant electric field in the plane, thereby investigating the effects on the energy spectrum. The additive effect of these pertubation opens a gap in the band struture, making the armchair semiconductor ribbon in large thickness scales. In this way we analyze how external parameters such as simple shear strain (γ) and electric field (F), modulate the gap of energy. For bilayer graphene nanoribbon, we analyze the dispersion relation for structures subjected to simple shear strain, with equal intensities in both layers plus electric field perpendicular to the plane of the layers. We verified that the effective action of the simple shear strain modifies the energy levels in a qualitative way to that observed in monolayer graphene nanoribbons, and associating this perturbation with the effect of the electric field perpendicular to the plane, we observed that Bernal stacked in nanoribbon (AB) also exhibit the possibility of modulating the magnitude of the energy gap, making non-gap configurations (ie metal ribbon) into semiconductors. In addition to the work on nanostructures, we developed a systematic study for Bernal-type stacking quantum rings bilayer graphene, investigating the energy and probability density spectra for rings with different types of geometry, edges, inner edge alignment and external, in the presence or absence of magnetic field perpendicular to the structure. Thus, we compare the theoretical results obtained with those reported in the literature for quantum rings in monolayer graphene , highlighting the similarities and differences between the characteristics of such confinement structures.
publishDate 2018
dc.date.issued.fl_str_mv 2018
dc.date.accessioned.fl_str_mv 2019-12-26T16:35:35Z
dc.date.available.fl_str_mv 2019-12-26T16:35:35Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/masterThesis
format masterThesis
status_str publishedVersion
dc.identifier.citation.fl_str_mv BANDEIRA, N. S. Propriedades eletrônicas em nanoestruturas mono e bicamada de grafeno via modelo tight binding. 2018, 101 f. Dissertação (Mestrado em Física) - Universidade Federal do Ceará, Fortaleza, 2018.
dc.identifier.uri.fl_str_mv http://www.repositorio.ufc.br/handle/riufc/49064
identifier_str_mv BANDEIRA, N. S. Propriedades eletrônicas em nanoestruturas mono e bicamada de grafeno via modelo tight binding. 2018, 101 f. Dissertação (Mestrado em Física) - Universidade Federal do Ceará, Fortaleza, 2018.
url http://www.repositorio.ufc.br/handle/riufc/49064
dc.language.iso.fl_str_mv por
language por
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv reponame:Repositório Institucional da Universidade Federal do Ceará (UFC)
instname:Universidade Federal do Ceará (UFC)
instacron:UFC
instname_str Universidade Federal do Ceará (UFC)
instacron_str UFC
institution UFC
reponame_str Repositório Institucional da Universidade Federal do Ceará (UFC)
collection Repositório Institucional da Universidade Federal do Ceará (UFC)
bitstream.url.fl_str_mv http://repositorio.ufc.br/bitstream/riufc/49064/1/2018_dis_nsbandeira.pdf
http://repositorio.ufc.br/bitstream/riufc/49064/2/license.txt
bitstream.checksum.fl_str_mv 9dec3a2a1dc362498c376467d78142a7
8a4605be74aa9ea9d79846c1fba20a33
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
repository.name.fl_str_mv Repositório Institucional da Universidade Federal do Ceará (UFC) - Universidade Federal do Ceará (UFC)
repository.mail.fl_str_mv bu@ufc.br || repositorio@ufc.br
_version_ 1847793082372718592