Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo
Ano de defesa: | 2023 |
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Autor(a) principal: | |
Orientador(a): | |
Banca de defesa: | |
Tipo de documento: | Dissertação |
Tipo de acesso: | Acesso aberto |
Idioma: | por |
Instituição de defesa: |
Não Informado pela instituição
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Programa de Pós-Graduação: |
Pós-Graduação em Ciência e Engenharia de Materiais
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Departamento: |
Não Informado pela instituição
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País: |
Não Informado pela instituição
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Palavras-chave em Português: | |
Área do conhecimento CNPq: | |
Link de acesso: | https://ri.ufs.br/jspui/handle/riufs/17744 |
Resumo: | Thin films of ZrxSi1-XN were obtained using the reactive magnetron sputtering technique in order to evaluate the influence of substrate temperature on structure, morphology and hardness. Two samples with silicon contents of 1.6 and 8.0 at. % were chosen and deposited on a substrate heated to 700ºC. Thin films were characterized by RBS, GIXRD, SEM-FEG and nanohardness. From the GIXRD analyses, it was possible to observe that the face-centered cubic (CFC) phase of ZrN was maintained at high deposition temperature for both samples with a preferential growth orientation in the (200) direction for the sample with 1.6 at. % Si and a mixed growth orientation for the sample with 8.0 at. % Si in the (100) and (200) directions. XPS analyzes confirm that silicon is present in the structure in the form of Si3N4, regardless of the silicon content adopted and the deposition temperature, in addition to the presence of free silicon (Si°) for the sample with 8.0 at. % of silicon deposited at 700ºC. The presence of Si° ratified the decomposition of Si3N4 into Si and N2 due to the temperature of the substrate for high silicon contents. From the micrographs obtained by SEM-FEG, it was possible to verify the formation of a morphology with columnar grains present in both samples with the increase of the substrate temperature, in addition to a denser microstructure for the sample with 1.6 at. % of silicon. The highest hardness values were verified for the ZrSiN_1.6_700 sample. The increase in temperature did not promote significant gains in hardness for the sample with 8.0 at. % of silicon, with all values within the error margin. |
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Oliveira, Fábio Santos deTentardini, Eduardo Kirinus2023-06-22T20:45:15Z2023-06-22T20:45:15Z2023-02-06OLIVEIRA, Fábio Santos de. Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo. 2023. 57 f. Dissertação (Mestrado em Ciência e Engenharia de Materiais) – Universidade Federal de Sergipe, São Cristóvão, 2023.https://ri.ufs.br/jspui/handle/riufs/17744Thin films of ZrxSi1-XN were obtained using the reactive magnetron sputtering technique in order to evaluate the influence of substrate temperature on structure, morphology and hardness. Two samples with silicon contents of 1.6 and 8.0 at. % were chosen and deposited on a substrate heated to 700ºC. Thin films were characterized by RBS, GIXRD, SEM-FEG and nanohardness. From the GIXRD analyses, it was possible to observe that the face-centered cubic (CFC) phase of ZrN was maintained at high deposition temperature for both samples with a preferential growth orientation in the (200) direction for the sample with 1.6 at. % Si and a mixed growth orientation for the sample with 8.0 at. % Si in the (100) and (200) directions. XPS analyzes confirm that silicon is present in the structure in the form of Si3N4, regardless of the silicon content adopted and the deposition temperature, in addition to the presence of free silicon (Si°) for the sample with 8.0 at. % of silicon deposited at 700ºC. The presence of Si° ratified the decomposition of Si3N4 into Si and N2 due to the temperature of the substrate for high silicon contents. From the micrographs obtained by SEM-FEG, it was possible to verify the formation of a morphology with columnar grains present in both samples with the increase of the substrate temperature, in addition to a denser microstructure for the sample with 1.6 at. % of silicon. The highest hardness values were verified for the ZrSiN_1.6_700 sample. The increase in temperature did not promote significant gains in hardness for the sample with 8.0 at. % of silicon, with all values within the error margin.Filmes finos de ZrxSi1-XN foram obtidos através da técnica de magnetron sputtering reativo com o objetivo de avaliar a influência da temperatura do substrato na estrutura, morfologia e dureza. Foram escolhidas duas amostras com teores de silício de 1,6 e 8,0 at.% depositadas em substrato aquecido a 700ºC. Os filmes finos foram caracterizados por RBS, GIXRD, MEV-FEG e nanodureza. A partir das análises de GIXRD foi possível observar que a fase cúbica de face centrada (CFC) do ZrN se manteve para alta temperatura de deposição para ambas amostras com uma orientação preferencial de crescimento na direção (200) para a amostra com 1,6 at.% de Si e uma orientação de crescimento mista para a amostra com 8,0 at.% de Si nas direções (100) e (200). Análises de XPS ratificam que o silício está presente na estrutura na forma de Si3N4, independente do teor de silício adotado e da temperatura de deposição, além da presença do silício livre (Si°) para a amostra com 8,0 at.% de silício depositada a 700ºC. A presença do Si° ratificou a decomposição do Si3N4 em Si e N2 devido à temperatura do substrato para altos teores de silício. A partir das micrografias obtidas por MEVFEG foi possível constatar a formação de uma morfologia com grãos colunares presente em ambas as amostras com o aumento da temperatura do substrato, além de uma microestrutura mais densa para a amostra com 1,6 at.% de silício. Os maiores valores de dureza foram verificados para a amostra ZrSiN_1.6_700. O aumento da temperatura não promoveu ganhos significativos de dureza para a amostra com 8,0 at.% de silício estando todos os valores dentro da margem de erro.São CristóvãoporFilmes finosZircônioMagnetronsFilmes finosNitreto de zircônioZrSiNMagnetron sputtering reativoThin filmsZirconium nitrideReactive magnetron sputteringENGENHARIAS::ENGENHARIA DE MATERIAIS E METALURGICAInfluência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativoInfluence of substrate temperature on the structure of ZrxSi1-XN thin films deposited by reactive magnetron sputteringinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisPós-Graduação em Ciência e Engenharia de MateriaisUniversidade Federal de Sergipe (UFS)reponame:Repositório Institucional da UFSinstname:Universidade Federal de Sergipe (UFS)instacron:UFSinfo:eu-repo/semantics/openAccessLICENSElicense.txtlicense.txttext/plain; charset=utf-81475https://ri.ufs.br/jspui/bitstream/riufs/17744/1/license.txt098cbbf65c2c15e1fb2e49c5d306a44cMD51ORIGINALFABIO_SANTOS_OLIVEIRA.pdfFABIO_SANTOS_OLIVEIRA.pdfapplication/pdf1881981https://ri.ufs.br/jspui/bitstream/riufs/17744/2/FABIO_SANTOS_OLIVEIRA.pdfc31a31ffe5571e9fcd59331ab8a1cdb0MD52TEXTFABIO_SANTOS_OLIVEIRA.pdf.txtFABIO_SANTOS_OLIVEIRA.pdf.txtExtracted texttext/plain100408https://ri.ufs.br/jspui/bitstream/riufs/17744/3/FABIO_SANTOS_OLIVEIRA.pdf.txteb75abd11c9ea42de2cd1c5f13c860faMD53THUMBNAILFABIO_SANTOS_OLIVEIRA.pdf.jpgFABIO_SANTOS_OLIVEIRA.pdf.jpgGenerated Thumbnailimage/jpeg1245https://ri.ufs.br/jspui/bitstream/riufs/17744/4/FABIO_SANTOS_OLIVEIRA.pdf.jpg2315b520d69b5ffe3f9b8f3801c5492cMD54riufs/177442023-06-22 17:45:20.261oai:ufs.br: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Repositório InstitucionalPUBhttps://ri.ufs.br/oai/requestrepositorio@academico.ufs.bropendoar:2023-06-22T20:45:20Repositório Institucional da UFS - Universidade Federal de Sergipe (UFS)false |
dc.title.pt_BR.fl_str_mv |
Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo |
dc.title.alternative.eng.fl_str_mv |
Influence of substrate temperature on the structure of ZrxSi1-XN thin films deposited by reactive magnetron sputtering |
title |
Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo |
spellingShingle |
Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo Oliveira, Fábio Santos de Filmes finos Zircônio Magnetrons Filmes finos Nitreto de zircônio ZrSiN Magnetron sputtering reativo Thin films Zirconium nitride Reactive magnetron sputtering ENGENHARIAS::ENGENHARIA DE MATERIAIS E METALURGICA |
title_short |
Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo |
title_full |
Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo |
title_fullStr |
Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo |
title_full_unstemmed |
Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo |
title_sort |
Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo |
author |
Oliveira, Fábio Santos de |
author_facet |
Oliveira, Fábio Santos de |
author_role |
author |
dc.contributor.author.fl_str_mv |
Oliveira, Fábio Santos de |
dc.contributor.advisor1.fl_str_mv |
Tentardini, Eduardo Kirinus |
contributor_str_mv |
Tentardini, Eduardo Kirinus |
dc.subject.por.fl_str_mv |
Filmes finos Zircônio Magnetrons Filmes finos Nitreto de zircônio ZrSiN Magnetron sputtering reativo Thin films Zirconium nitride Reactive magnetron sputtering |
topic |
Filmes finos Zircônio Magnetrons Filmes finos Nitreto de zircônio ZrSiN Magnetron sputtering reativo Thin films Zirconium nitride Reactive magnetron sputtering ENGENHARIAS::ENGENHARIA DE MATERIAIS E METALURGICA |
dc.subject.cnpq.fl_str_mv |
ENGENHARIAS::ENGENHARIA DE MATERIAIS E METALURGICA |
description |
Thin films of ZrxSi1-XN were obtained using the reactive magnetron sputtering technique in order to evaluate the influence of substrate temperature on structure, morphology and hardness. Two samples with silicon contents of 1.6 and 8.0 at. % were chosen and deposited on a substrate heated to 700ºC. Thin films were characterized by RBS, GIXRD, SEM-FEG and nanohardness. From the GIXRD analyses, it was possible to observe that the face-centered cubic (CFC) phase of ZrN was maintained at high deposition temperature for both samples with a preferential growth orientation in the (200) direction for the sample with 1.6 at. % Si and a mixed growth orientation for the sample with 8.0 at. % Si in the (100) and (200) directions. XPS analyzes confirm that silicon is present in the structure in the form of Si3N4, regardless of the silicon content adopted and the deposition temperature, in addition to the presence of free silicon (Si°) for the sample with 8.0 at. % of silicon deposited at 700ºC. The presence of Si° ratified the decomposition of Si3N4 into Si and N2 due to the temperature of the substrate for high silicon contents. From the micrographs obtained by SEM-FEG, it was possible to verify the formation of a morphology with columnar grains present in both samples with the increase of the substrate temperature, in addition to a denser microstructure for the sample with 1.6 at. % of silicon. The highest hardness values were verified for the ZrSiN_1.6_700 sample. The increase in temperature did not promote significant gains in hardness for the sample with 8.0 at. % of silicon, with all values within the error margin. |
publishDate |
2023 |
dc.date.accessioned.fl_str_mv |
2023-06-22T20:45:15Z |
dc.date.available.fl_str_mv |
2023-06-22T20:45:15Z |
dc.date.issued.fl_str_mv |
2023-02-06 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
OLIVEIRA, Fábio Santos de. Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo. 2023. 57 f. Dissertação (Mestrado em Ciência e Engenharia de Materiais) – Universidade Federal de Sergipe, São Cristóvão, 2023. |
dc.identifier.uri.fl_str_mv |
https://ri.ufs.br/jspui/handle/riufs/17744 |
identifier_str_mv |
OLIVEIRA, Fábio Santos de. Influência da temperatura do substrato na estrutura de filmes finos de ZrxSi1-XN depositados por magnetron sputtering reativo. 2023. 57 f. Dissertação (Mestrado em Ciência e Engenharia de Materiais) – Universidade Federal de Sergipe, São Cristóvão, 2023. |
url |
https://ri.ufs.br/jspui/handle/riufs/17744 |
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por |
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info:eu-repo/semantics/openAccess |
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openAccess |
dc.publisher.program.fl_str_mv |
Pós-Graduação em Ciência e Engenharia de Materiais |
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Universidade Federal de Sergipe (UFS) |
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reponame:Repositório Institucional da UFS instname:Universidade Federal de Sergipe (UFS) instacron:UFS |
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Universidade Federal de Sergipe (UFS) |
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